收藏本站
Si8410/20/21 (5 kV)
Si8 422/23 ( 2. 5 & 5 k V)
3.3. Layout Recommendations
To ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 V AC ) must be physically
separated from the safety extra-low voltage circuits (SELV is a circuit with <30 V AC ) by a certain distance
(creepage/clearance). If a component, such as a digital isolator, straddles this isolation barrier, it must meet those
creepage/clearance requirements and also provide a sufficiently large high-voltage breakdown protection rating
(commonly referred to as working voltage protection). Table 6 on page 16 and Table 7 on page 17 detail the
working voltage and creepage/clearance capabilities of the Si84xx. These tables also detail the component
standards (UL1577, IEC60747, CSA 5A), which are readily accepted by certification bodies to provide proof for
end-system specifications requirements. Refer to the end-system specification (61010-1, 60950-1, 60601-1, etc.)
requirements before starting any design that uses a digital isolator.
3.3.1. Supply Bypass
The Si841x/2x family requires a 0.1 μF bypass capacitor between V DD1 and GND1 and V DD2 and GND2. The
capacitor should be placed as close as possible to the package. To enhance the robustness of a design, it is further
recommended that the user also add 1 μF bypass capacitors and include 100 ? resistors in series with the inputs
and outputs if the system is excessively noisy.
3.3.2. Pin Connections
No connect pins are not internally connected. They can be left floating, tied to V DD , or tied to GND.
3.3.3. Output Pin Termination
The nominal output impedance of an isolator driver channel is approximately 50 ? , ±40%, which is a combination
of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving
loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
3.4. Fail-Safe Operating Mode
Si84xx devices feature a selectable (by ordering option) mode whereby the default output state (when the input
supply is unpowered) can either be a logic high or logic low when the output supply is powered. See Table 12 on
page 22 and "6. Ordering Guide" on page 29 for more information.
24
Rev. 1.3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI8435BB-C-IS1 IC ISOLATOR DGTL 3CH 16SOIC
SI8442BB-C-IS1 IC ISOLATOR DGTL 4CH 16SOIC
SI8451BB-A-IS1 IC ISOLATOR DGTL 5CH 16SOIC
SI8460BB-A-IS1 IC ISOLATOR DGTL 6CH 16SOIC
SI8606AC-B-IS1 IC ISOLATOR BIDIR 3.75KV 16SOIC
SI8621ED-B-IS IC ISOLATOR 2CH 5KV 16-SOIC
SI8631EC-B-IS1 IC ISOLATOR 3CH 3.75KV 16-SOIC
SI8641ED-B-IS IC ISOLATOR 4CH 5.0KV 16-SOIC
相关代理商/技术参数
SI8423BD-B-ISR 功能描述:隔离器接口集成电路 Dual Ch 5kV Isolator 150M RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
SI8424CDB 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 8 V (D-S) MOSFET
SI8424CDB-T1-E1 功能描述:MOSFET 8V 10A 2.7W 20mOhms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI8424DB 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 1.2-V (G-S) MOSFET
SI8424DB-T1-E1 功能描述:MOSFET 8.0V 12.2A 6.25W 31mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI8425DB 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET
SI8425DB-T1-E1 功能描述:MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI84-270 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor